60V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 4.5 A, 60 V

60V，互补，PowerTrench® MOSFET

此互补MOSFET器件采用飞兆先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 • Q1： N沟道\n• 4.5 A，60 V;

60V 互补 PowerTrench® MOSFET

此互补MOSFET器件采用飞兆先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 •Q1：N沟道\n•4.5 A、60 V。\n•RDS(ON) = 105 mΩ @ VGS = -10 V\n•RDS(ON) = 135 mΩ @ VGS = -4.5 V;

60V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 4.5 A, 60 V

60V Complementary PowerTrench?숸OSFET

文件：385.94 Kbytes Page：8 Pages

N- and P-Channel 60-V (D-S) MOSFET

文件：1.18676 Mbytes Page：14 Pages

HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER????

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER????

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL OPERATIONAL AMPLIFIER

文件：80.83 Kbytes Page：2 Pages

DUAL OPERATIONAL AMPLIFIER

文件：80.83 Kbytes Page：2 Pages

DUAL OPERATIONAL AMPLIFIER?

文件：56.4 Kbytes Page：2 Pages