P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Features • –13.5 A, –20 V. RDS(ON) = 8.5

P-Channel 1.8V Specified PowerTrench® MOSFET

General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Applications • Power management • Load swi

P 沟道，1.8V 指定，PowerTrench® MOSFET，-20V，-13.5A，8.5mΩ

P-Channel 1.8V Specified PowerTrench??MOSFET

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P 沟道，1.8V 指定，PowerTrench® MOSFET，-20V，-13.5A，8.5 mΩ

MOSFET P-CHANNEL 20V 13.5A 8SO

P-Channel 1.8V Specified PowerTrench MOSFET

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