N-Channel PowerTrench짰 MOSFET 60V, 21A, 25m廓

Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • RDS(on) = 20mΩ ( Typ.)@ VGS = 10V, ID = 21A • RDS(on) = 23

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

N 沟道，逻辑电平，PowerTrench® MOSFET，60V，21A，25mΩ

该 N 沟道 MOSFET 采用飞兆半导体的 PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 •RDS(on) = 20mΩ （典型值）@ VGS = 10V, ID = 21A\n•RDS(on) = 23mΩ（典型值）@ VGS = 5V, ID = 17A\n•低栅极电荷（典型值23.2nC)\n•Low Crss （典型值）64pF)\n•快速开关\n•100%经过雪崩测试\n•提高了 dv/dt 性能\n•符合 RoHS 标准;