isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.44Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

功率 MOSFET，N 沟道，UniFETTM，650V，15A，440 mΩ，TO-220F

650V N-Channel MOSFET

文件：1.35299 Mbytes Page：10 Pages

650V N-Channel MOSFET

文件：1.42345 Mbytes Page：10 Pages

650V N-Channel MOSFET

文件：473.37 Kbytes Page：10 Pages

N-Channel UniFETTM MOSFET 650 V, 15 A, 440 m?

文件：837.5 Kbytes Page：8 Pages

15 Amps, 650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 15N65 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pu

15A, 650V N-CHANNEL POWER MOSFET

文件：186.58 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：341.06 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：231.88 Kbytes Page：2 Pages

N-CHANNEL POWER MOSFET

文件：209.85 Kbytes Page：5 Pages