isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.44Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

功率 MOSFET，N 沟道，UniFETTM，650V，15A，440 mΩ，TO-220F

UniFETTMMOSFET 是飞兆半导体的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。该器件系列适用于开关电源转换器应用，如功率因数校正(PFC)、平板显示器(FPD)电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 440mΩ （最大值）（VGS = 10V, ID = 7.5A）栅极电荷低（典型值：48.5nC)\n•低 Crss（典型值23.6pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

650V N-Channel MOSFET

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650V N-Channel MOSFET

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650V N-Channel MOSFET

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N-Channel UniFETTM MOSFET 650 V, 15 A, 440 m?

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HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

650V N-Channel MOSFET

文件：1.35299 Mbytes Page：10 Pages