丝印代码：FDP8443；N-Channel PowerTrench® MOSFET 40V, 80A, 3.5mΩ

Features - Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A - Typ Qg(10) = 142nC at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 - RoHS Compliant Applications - Automotive Engine Control - Powertrain Managemen

N-Channel PowerTrench짰 MOSFET

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isc N-Channel MOSFET Transistor

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N-Channel PowerTrench® MOSFET

40 V、80 A、2.7 mΩ、TO-220N 沟道 PowerTrench®

N-Channel PowerTrench® MOSFET 40 V, 80 A, 3.5 mΩ 典型 rDS(on) = 2.7 mΩ （VGS = 10 V、ID = 80 A）\n VGS = 10V时，Qg(10) = 142nC（典型值）\n 低米勒电荷\n 低 Qrr体二极管\n UIS 能力（单脉冲和重复脉冲）\n 符合 AEC Q101 标准\n 符合 RoHS 标准;

N-Channel PowerTrench MOSFET

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=80A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

AXL E PN DIO16 M12 6M

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N-Channel PowerTrench짰 MOSFET

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I2C-bus controlled YUV/RGB switch

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