isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =6.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

N 沟道逻辑电平 PowerTrench® MOSFET 60V，80A，6mΩ

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. •RDS(on) = 4.6mΩ （典型值） @ VGS = 10V, ID = 80A\n•高性能沟道技术可实现极低的 RDS(on)\n•低栅极电荷\n•高功率和高电流处理能力\n•符合 RoHS 标准;

N-Channel Logic Level PowerTrench MOSFET

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Axial Lead Standard Recovery Silicon Rectifiers, 3 Amp

Description: The NTE5800 through NTE5809 silicon rectifiers are designed for use in power supplies and other applications having need of a device with the following features: ● High Current to Small Size ● High Surge Current Capability ● Low Forward Voltage Drop

High Intensity LED in 5 mm Clear Package

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High Efficiency Blue LED, 5 mm Untinted Non - Diffused Package

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High Efficiency LED, 5 mm Untinted Non-Diffused

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High Intensity LED, 5 mm Untinted Non-Diffused

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