N-Channel PowerTrench MOSFET 100V, 32A, 36m?

Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectur

STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY

GENERALDESCRIPTION The TK2150 (TC2001/TP2150 chipset) is a two-channel, 200W(6Ω) per channel Amplifier Driver that uses Tripath’s proprietary Digital Power Processing (DPP™ )technology. Class-T amplifiers offer both the audio fidelity of Class-AB and the power efficiency of Class-D amplifiers. F

N 沟道，PowerTrench® MOSFET，100V，32A，36mΩ

100V，32A，0.036Ω @ VGS = 10V，TO-220 封装 •RDS(ON) = 32mΩ（典型值）, VGS = 10V, ID = 32A\n•Qg(tot) = 18.5nC （典型值），VGS = 10V\n•低米勒电荷\n•低 QRR体二极管\n•UIS 能力（单脉冲和重复脉冲）;

isc N-Channel MOSFET Transistor

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N-Channel PowerTrench MOSFET 100V, 32A, 36m?

Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectur

N-Channel PowerTrench MOSFET 100V, 32A, 36m?

Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectur

N-Channel PowerTrench MOSFET 100V, 6A, 35m?

Features • rDS(ON) = 30mΩ (Typ.), VGS = 10V, ID = 6A • Qg(tot) = 19nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) Applications • DC/DC converters and Off-Line UPS • Distributed P

Triple, Wideband, Fixed Gain BUFFER AMPLIFIER With Disable

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