N-Channel PowerTrench MOSFET 100V, 61A, 16m?

Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 61A • Qg(tot) = 41nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC Converters and Off-line UPS • Distributed Power Architectures

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 61A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =16mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

•rDS(ON) = 14mΩ(Typ.), VGS = 10V, ID = 61A \n•Qg(tot) = 41nC (Typ.), VGS = 10V \n•Low Miller Charge \n•Low Qrr Body Diode \n•UIS Capability (Single Pulse and Repetitive Pulse);

N-Channel PowerTrench MOSFET 100V, 61A, 16m?

Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 61A • Qg(tot) = 41nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC Converters and Off-line UPS • Distributed Power Architectures

Optically-Coupled Linear ISOLATION AMPLIFIERS

文件：127.75 Kbytes Page：13 Pages

Optically-Coupled Linear ISOLATION AMPLIFIERS

文件：127.75 Kbytes Page：13 Pages

Optically-Coupled Linear ISOLATION AMPLIFIERS

文件：127.75 Kbytes Page：13 Pages