丝印代码：FDP18N50；N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ

Description UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for

PFCPWM Combination Controller

Introduction This application note describes step-by-step design considerations for a power supply using the FAN480X controller. The FAN480X combines a PFC controller and a PWM controller. The PFC controller employs average current mode control for Continuous Conduction Mode (CCM) boost converter

500V N-Channel MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =18A@ TC=25℃ ·Drain Source Voltage : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.265Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

功率 MOSFET，N 沟道，UniFETTM，500 V，18 A，265 mΩ，TO-220

UniFETTMMOSFET 是飞兆半导体的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。该器件系列适用于开关电源转换器应用，如功率因数校正(PFC)、平板显示器(FPD)电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 265mΩ （最大值）@ VGS = 10V, ID = 9A栅极电荷低（典型值：45nC)\n•低 Crss（典型值25pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

Power Factor Correction Converter Design

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500V N-Channel MOSFET

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500V N-Channel MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A)

Applications 1. Switch Mode Power Supply (SMPS) 2. Uninterruptible Power Supply 3. High Speed Power Switching 4. Hard Switched and High Frequency Circuits

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.