N-Channel PowerTrench짰 MOSFET 75V, 164A, 4.7m廓

Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • RDS(on) = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 80A • Fast switc

N 沟道，PowerTrench® MOSFET，75V，164A，4.7mΩ

该 N 沟道 MOSFET 采用飞兆半导体的 PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 •RDS(on) = 3.8mΩ （典型值）@ VGS = 10V, ID = 80A\n•快速开关速度\n•低栅极电荷\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力\n•符合 RoHS 标准;

isc N-Channel MOSFET Transistor

文件：328.22 Kbytes Page：2 Pages

N-ch Trench MOS FET

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATU