N 沟道，PowerTrench® MOSFET，100V，2.7A，109mΩ

这一N沟道MOSFET器件采用飞兆半导体的高级PowerTrench®工艺生产，该工艺专为实现rDS(on)、开关性能以及坚固性而优化。 •VGS = 10 V，ID = 1.5 A时，最大rDS(on) = 109 mΩ\n•VGS = 6 V，ID = 1.2 A时，最大rDS(on) = 175 mΩ\n•高性能沟道技术可实现极低的RDS(on)\n•在广泛使用的表面贴装封装中可实现高功率和高电流处理能力\n•快速开关速度\n•100%经过UIL测试\n•符合RoHS标准;

N-Channel PowerTrench짰 MOSFET 100 V, 2.7 A, 109 m

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100V 3.5A N-Channel MOSFET

General Features ® Vos = 100VIp = 3.54 Rosow

HIGH SPEED ANALOG OUTPUT TYPE 8 PIN PHOTOCOUPLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

HIGH SPEED ANALOG OUTPUT TYPE 8 PIN PHOTOCOUPLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

HIGH SPEED ANALOG OUTPUT TYPE 8 PIN PHOTOCOUPLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

HIGH SPEED ANALOG OUTPUT TYPE 8 PIN PHOTOCOUPLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES 600 VOLTS

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