N-Channel, Logic Level, PowerTrench課?

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • 1.8 A, 30 V. RDS(on) = 0.100

These devices are particularly suited for low voltage applications in notebook computers,

Features VDS (V) = 30V RDS(ON)

MOSFET

General Description These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Feature

N-Channel, Logic Level, PowerTrench課?

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • 1.8 A, 30 V. RDS(on) = 0.100

丝印代码：361AN；N-Channel Enhancement Mode MOSFET

Features ® Vos =30Vio = 2A Rosin

丝印代码：361B；MOSFET

General Description These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Feature

N 沟道，逻辑电平，PowerTrench® MOSFET，30V，1.4A，110mΩ

这些N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态阻抗并保持卓越开关性能而定制的。此类器件特别适合笔记本电脑、便携电话、PCMCIA卡等低电压应用及其他需要采用极小封装外形表面贴装封装、具有快速开关和低线内功率损耗的电池供电电路。 •1.8 A，30 V。\n•RDS(ON) = 110 mΩ @ VGS = -10 V\n•RDS(ON) = 160 mΩ @ VGS = 4.5 V\n•低栅极电荷\n•工业标准外形SOT-23表面贴装封装采用专有SuperSOT™-3设计，具有优异的热性能和电气性能\n•高性能沟道技术可实现极低的RDS(on);

丝印代码：361B；These devices are particularly suited for low voltage applications in notebook computers,

Features VDS (V) = 30V RDS(ON)

30V N-Channel, Logic Level, PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low v

MOSFET N-CH 30V 1.8A SSOT-3

Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz

Description: The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: ● Specified 12.5 Volt, 470MHz Characteristics: Output Power = 2.0 Watts Minimum Gain = 8.0dB

High Speed Differential Comparators

文件：271.15 Kbytes Page：10 Pages

High Speed Differential Comparators

文件：271.15 Kbytes Page：10 Pages

High Speed Differential Comparators

文件：271.15 Kbytes Page：10 Pages

High Speed Differential Comparators

文件：271.15 Kbytes Page：10 Pages