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位置：首页 > IC中文资料第4199页 > FDN

FDN价格

参考价格：￥0.5855

型号：FDN302P 品牌：FAIRCHILD 备注：这里有FDN多少钱，2024年最近7天走势，今日出价，今日竞价，FDN批发/采购报价，FDN行情走势销售排行榜，FDN报价。
型号 功能描述 生产厂家&企业 LOGO 操作
FDN302

P-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagement applicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features •–20V,–2.4A.Rds(on)=0.055Ω@

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN302P

P-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagement applicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features •–20V,–2.4A.Rds(on)=0.055Ω@

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN302P

P-Channel Enhancement-Mode MOS FETs

ProductSummary Vps=-20V,Ip=-3A Rosion)

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
FDN302P

P-Channel 2.5 V (D-S) MOSFET

Features •–20V,–2.4A.RDS(ON)=55mΩ@VGS=–4.5V RDS(ON)=80mΩ@VGS=–2.5V •Fastswitchingspeed •Highperformancetrenchtechnologyforextremely lowRDS(ON) •SuperSOTTM-3provideslowRDS(ON)and30higher powerhandlingcapabilitythanSOT23inthesame footprint

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN304P

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–2.4A,–20V.RDS(ON)=52mΩ@VGS=–4.5VRDS(ON)=70mΩ@VGS=–2.5VRDS(ON)=100mΩ@VGS=–

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN304P

P-Channel MOSFET

■Features ●VDS(V)=-20V ●ID=-2.4A(VGS=-4.5V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
FDN304P

POWER MOSFET -3A, -16V P-CHANNEL

DESCRIPTION The FDN304PisavailableinSOT23package FEATURES ⚫-16V/-3A RDS(ON)=160mΩ(Max)@VGS=-4.5V RDS(ON)=240mΩ(Max)@VGS=-2.5V ⚫SuperHighdensecelldesignforextremelylowRDS(ON) ⚫ReliableandRugged ⚫AvailableinSOT23package APPLICATION ⚫PowerManagement

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
FDN304P

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ●TrenchFETPowerMOSFET ●Supperhighdensitycelldesign

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN304PZ

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ·–2.4A,–20V.RDS(ON)=52mW@VGS=–4.5V RDS(ON)=70mW@VGS=–2.5V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN306P

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–2.6A,–12V.RDS(ON)=40mΩ@VGS=–4.5VRDS(ON)=50mΩ@VGS=–2.5VRDS(ON)=80mΩ@VGS=–

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN306P

P-Channel 1.8 V (D-S) MOSFET

Features •–2.6A,–12V.RDS(ON)=40mΩ@VGS=–4.5V RDS(ON)=50mΩ@VGS=–2.5V RDS(ON)=80mΩ@VGS=–1.8V •Fastswitchingspeed •Highperformancetrenchtechnologyforextremely lowRDS(ON) •SuperSOTTM-3provideslowRDS(ON)and30higher powerhandlingcapabilitythanSOT

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN308P

P-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagement applicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features •–20V,–1.5A.Rds(on)=125mΩ@Vgs=–4.5

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN308P

P-Channel Mosfet

ProductSummary Vbss=-20V,Ip=-2.8A RDS(on)80mQ@-2.5V(Typ) 110mQ@-4.5V(Typ) 'HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
FDN308P

P-Channel 2.5 V (D-S) MOSFET

Features VDS(V)=-20V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN327

N-Channel 2.5 V (D-S) MOSFET

Features VDS(V)=20V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN327N

N-Channel 2.5 V (D-S) MOSFET

Features VDS(V)=20V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN335

N-Channel 2.5V Specified PowerTrenchTM MOSFET

GeneralDescription ThisN-Channel2.5VspecifiedMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •1.7A,20V.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN335N

N-Channel 2.5V Specified PowerTrenchTM MOSFET

GeneralDescription ThisN-Channel2.5VspecifiedMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •1.7A,20V.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN335N

20 V N-Channel Enhancement Mode MOSFET

VDS=20VΩ RDS(ON),Vgs@2.5V,Ids@1.7A=70mΩ RDS(ON),Vgs@2.5V,Ids@1.5A=100mΩ Features Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
FDN335N

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ●TrenchFETPowerMOSFET ●Supperhighdensitycelldesign

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN336

Single P-Channel 2.5V Specified PowerTrenchTM MOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Thesedevicesarewellsuit

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN336

P-Channel 2.5 V (D-S) MOSFET

Features VDS(V)=-20V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN336P

Single P-Channel 2.5V Specified PowerTrenchTM MOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Thesedevicesarewellsuit

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN336P

P-Channel Mosfet

ProductSummary Vbss=-20V,Ip=-2.8A RDS(on)80mQ@-2.5V(Typ) 110mQ@-4.5V(Typ) -HighPowerandcurrenthandingcapability -Leadfreeproductisacquired -SurfaceMountPackage

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
FDN337

N-Channel 30 V (D-S) MOSFET

Features HighdensitycelldesignforextremelylowRDS(ON). Exceptionalon-resistanceandmaximumDCcurrentcapability. VDS(V)=30V D=2.2A(VGS=4.5V) RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN337N

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription SuperSOTTM-3N-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticular

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN337N

N-Channel 30 V (D-S) MOSFET

Features HighdensitycelldesignforextremelylowRDS(ON). Exceptionalon-resistanceandmaximumDCcurrentcapability. VDS(V)=30V D=2.2A(VGS=4.5V) RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN338

P-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ·–1.6A,–20V.RDS(ON)=115mW@VGS=–4.5V RDS(ON)=155mW@VGS=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN338

P-Channel 20-V(D-S) MOSFET

GeneralFEATURE ●TrenchFETPowerMOSFET ●Leadfreeproductisacquired ●Surfacemountpackage APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓锋半导体深圳市拓锋半导体科技有限公司

TUOFENG
FDN338P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ·–1.6A,–20V.RDS(ON)=115mW@VGS=–4.5V RDS(ON)=155mW@VGS=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN338P

20 V P-Channel Enhancement Mode MOSFET

VDS=-20V RDS(ON),Vgs@-4.5V,Ids@-1.6A=115mΩ RDS(ON),Vgs@-2.5V,Ids@-1.3A=155mΩ Features Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
FDN338P

P-Channel 20-V(D-S) MOSFET

Application ●Load/PowerSwitching ●InterfacingSwitching ●LogicLevelShift

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
FDN338P

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFETPowerMOSFET

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN339

N-Channel 2.5 V (D-S) MOSFET

Features VDS(V)=20V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN339AN

N-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisN-Channel2.5VspecifiedMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargefor superiorswitchingperformance. Features •3A,20V.Rd

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN340

Single P-Channel, Logic Level, PowerTrench MOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductoradvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·–2A,20

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN340P

Single P-Channel, Logic Level, PowerTrench MOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductoradvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·–2A,20

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN340P

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ●TrenchFETPowerMOSFET ●Supperhighdensitycelldesign

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN342P

P-Channel 2.5V Specified PowerTrench??MOSFET

P-Channel2.5VSpecifiedPowerTrench™MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN342P

P-Channel Enhancement-Mode MOS FETs

ProductSummary Vps=-20V,Ip=-3A Rosion)

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
FDN352

P-Channel 30 V (D-S) MOSFET

Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■Highperformancetrenchtechnologyforextremelylow RDS(ON). ■HighpowerversionofindustryStandardSOT-23package. Identicalpin-outtoSOT-23with30higherpowerhandling capability.

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN352AP

Single P-Channel, PowerTrench

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductoradvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ■–1.3A,–30

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN352AP

P-Channel MOSFET

■Features ●VDS(V)=-30V ●ID=-1.3A(VGS=-10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
FDN352AP

P-Channel 30 V (D-S) MOSFET

Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■Highperformancetrenchtechnologyforextremelylow RDS(ON). ■HighpowerversionofindustryStandardSOT-23package. Identicalpin-outtoSOT-23with30higherpowerhandling capability.

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN352AP-HF

P-Channel MOSFET

■Features ●VDS(V)=-30V ●ID=-1.3A(VGS=-10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
FDN357N

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription SuperSOTTM-3N-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticular

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN359

N-Channel Logic Level PowerTrenchTM MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandbatte

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN359A

N-Channel 30 V (D-S) MOSFET

Features VDS(V)=27V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN359AN

N-Channel Logic Level PowerTrenchTM MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandbatte

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN359AN

N-Channel 30 V (D-S) MOSFET

Features VDS(V)=27V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN359B

N-Channel 30 V (D-S) MOSFET

Features VDS(V)=30V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN359BN

N-Channel Logic Level PowerTrench TM MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN359BN

N-Channel Logic Level PowerTrenchTM MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN359BN

N-Channel 30 V (D-S) MOSFET

Features VDS(V)=30V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN359BN-F095

N-Channel Logic Level PowerTrenchTM MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN360

Single P-Channel PowerTrenchTM MOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductoradvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsui

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN360

Single P-Channel MOSFET

Features Lowgatecharge(6.2nCtypical) HighperformancetrenchtechnologyforextremelylowRDS(ON). HighpowerversionofindustryStandardSOT-23package. higherpowerhandlingcapability. VDS(V)=-30V D=-2A(VGS=10V) RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN360P

Single P-Channel PowerTrenchTM MOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductoradvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsui

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FDN360P

Single P-Channel MOSFET

Features Lowgatecharge(6.2nCtypical) HighperformancetrenchtechnologyforextremelylowRDS(ON). HighpowerversionofindustryStandardSOT-23package. higherpowerhandlingcapability. VDS(V)=-30V D=-2A(VGS=10V) RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
FDN361

N-Channel, Logic Level, PowerTrench課?

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •1.8A,30V.RDS(on)=0.100

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDN产品属性

  • 类型

    描述

  • 型号

    FDN

  • 制造商

    Fairchild Semiconductor

  • 功能描述

    Bulk

FDN供应商更多...

更新时间：2024-6-21 14:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市金芯阳科技有限公司
FDN302P
FSC
15+
原厂原装
483000
进口原装现货假一赔十
询价
瀚佳科技(深圳)有限公司
FDN302P
FSC
18+
SOT23
98000
一级代理/全新原装现货/长期供应!
询价
深圳市华来深电子有限公司
FDN302P
FAIRCHI
23+
SOT-23
8560
受权代理!全新原装现货特价热卖!
询价
深圳市博浩通科技有限公司
FDN302P
FAIRCHILD
23+
SOT-23
9000
全新原装正品
询价
深圳市英科美电子有限公司
FDN302P
FAIRCHILD
2021+
N/A
6800
只有原装正品
询价
深圳市科芯源微电子有限公司
FDN302P
ON/安森美
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市明嘉莱科技有限公司
FDN302P
ON SEMICONDUCTOR
23+
SMD
918000
明嘉莱只做原装正品现货
询价
深圳市豪迈兴电子有限公司
FDN302P
FAIRCHILD
2339+
SOT23
5645
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市昌和盛利电子有限公司
FDN302P
FAIRCHILD
23+
SOT-23
9526
询价
深圳兆威电子有限公司
FDN302P
時科
22+
SOT23
60000
原装正品现货
询价

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