N 沟道，PowerTrench® SyncFET™ MOSFET，30V，42A，3.5mΩ

FDMS8670S设计用于最大限度地降低功率转换应用中的损耗。 先进的硅和封装技术完美融合，在保持卓越开关性能的同时，提供了最低的rDS(on)。 该器件可被额外作为一个有效的单片肖特基体二极管使用。 •VGS = 10V，ID = 20A时，最大rDS(on) = 3.5 mΩ\n•VGS = 4.5V，ID = 17A时，最大rDS(on) = 5.0 mΩ\n•先进的封装技术和硅技术相结合，实现了低rDS(on)和高效率\n•SyncFET肖特基体二极管\n•MSL1耐用封装设计\n•符合RoHS标准;

N-Channel PowerTrench SyncFETTM

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N-Channel PowerTrench짰 SyncFET TM 30V, 42A, 3.5m?

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N-Channel PowerTrench짰 SyncFET TM

文件：345.48 Kbytes Page：8 Pages

N-Channel PowerTrench짰 SyncFET TM 30V, 42A, 3.5m?

文件：231.05 Kbytes Page：8 Pages

N-Channel PowerTrench짰 SyncFET TM

文件：345.48 Kbytes Page：8 Pages

30V N-Channel PowerTrench MOSFET

General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller

Double-Conversion Narrow-Band FM IF System

Overview The LA8670M is a narrow band FM IF system for use in communication equipment. In addition to the functions required for FM reception, the LA8670M provides a rich set of additional functions including noise detection and field strength detection, and is thus optimal for cordless telepho

7400 PIXELS CCD LINEAR IMAGE SENSOR

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