N 沟道，Power Trench® MOSFET，60V，158A，2.5mΩ

该N沟道MOSFET专为使用同步或传统开关PWM控制器来改进总体效率和在最大程度上减少DC/DC转换器的开关结点振铃而设计。已经针对低栅极电荷、低rDS(on)、快速开关速度和软体二极管反向恢复性能进行了优化。 • Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 25 A\n• Max rDS(on) = 3.7 mΩ at VGS = 4.5 V, ID = 20 A\n• advanced Package and Silicon combination for low rDS(on) and high efficiency\n• Next generation enhanced body diode technology, engineered for soft recovery\n• MSL1 robust package design\n• 100% ;

N-Channel PowerTrench짰 MOSFET 60 V, 80 A, 2.5 m廓

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包装：散装 描述：MOSFET N-CH 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel Dual CoolTM Power Trench짰 MOSFET 60 V, 108 A, 2.3 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

SCXV.92/V.34/V.32bis Modem / Controller-based Modem with Worldwide SmartDAA 3 Line Side Device for Embedded Applications

Overview The Conexant®SCXV.92, SCXV.34, and SCXV.32bis modems are worldwide operational modem device sets for embedded applications that support modulations up to V.92, V.34, and V.32bis, respectively (refer to Table 1-1). All modems also support V.44/V.42bis/MNP 5 data compression for greater