N 沟道，Power Trench® MOSFET，150V，30A，25mΩ

此N沟道MOSFET采用飞兆半导体先进的Power Trench?工艺生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓越开关性能而定制的。 • Shielded Gate MOSFET Technology\n• Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A\n• Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A\n• Advanced package and silicon combinatory for low rDS(on) and high efficiency\n• MSL1 robust package design\n• 100% UIL tested\n• RoHS Compliant;

N-Channel PowerTrench짰 MOSFET 150 V, 20 A, 25 m廓

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STARSIGHT DATABASEENGINE

GENERAL DESCRIPTION Zilogs Z86250 StarSight Data Base Engine (DBE) is designed to process extracted data for the StarSight on-screen programming guide. The device is logically equivalent to the DBE1200 for StarSight applications. The Z86250 provides a number of important peripheral functions, su

FDD86250 N-Channel Shielded Gate PowerTrench짰 MOSFET 150 V, 50 A, 22 m廓

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THE ADVANCED 64-BIT WINDOWS-95 AND DIRECTDRAW ACCELERATOR

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Spacial CRN tspt door w/o mount.plate. H800xW600xD250 IP66 IK08 RAL7035..

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