N 沟道屏蔽门极 PowerTrench® MOSFET 120V，49A，11.5mΩ

这一N沟道MOSFET器件采用飞兆半导体的高级PowerTrench®工艺生产，该工艺专为最大限度地降低通态电阻并保持卓越的开关性能而量身定制。 •栅极屏蔽 MOSFET 技术\n•Max rDS(on) = 11.5 mΩ（VGS = 10 V，ID = 11.6 A时）\n•Max rDS(on) = 14.5 mΩ（VGS = 6 V，ID = 10.7 A时）\n•先进的封装和硅技术完美融合，实现了低rDS(on)和高效率\n•MSL1 耐用封装设计\n•100%经过UIL测试\n•符合 RoHS 标准;

N-Channel PowerTrench짰 MOSFET 120 V, 35 A, 11.5 m

文件：221.76 Kbytes Page：7 Pages

Network Processor with Integrated Ethernet Switch and USB2.0 Support

Single-Chip Solution with Integrated Five-Port Ethernet Switch and USB2.0 Host Support Conexant’s broadband communications portfolio includes a comprehensive suite of semiconductor solutions that enable the digital home and information network. The Conexant CX8620x Network Processor supports comp