N 沟道，PowerTrench® MOSFET，30V，6.3mΩ

该N沟道MOSFET专为使用同步或传统开关PWM控制器来改进总体效率和在最大程度上减少DC/DC转换器的开关结点振铃而设计。已经针对低栅极电荷、低rDS(on)、快速开关速度和软体二极管反向恢复性能进行了优化。 •VGS = 10 V，ID = 14 A时，最大rDS(on) = 6.3 mΩ\n•VGS = 4.5 V，ID = 11 A时，最大rDS(on) = 10.4 mΩ\n•先进的封装技术和硅技术相结合，实现了低rDS(on)和高效率\n•下一代先进体二极管技术，专为软恢复设计\n•MSL1耐用封装设计\n•100%经过UIL测试\n•符合RoHS标准;

N-Channel PowerTrench짰 MOSFET 30 V, 6.3 m廓

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CMOS, 6-Bit High-Speed Analog-to-digital Converter

CMOS, 6-Bit High-Speed Analog-to-Digital Converter

CMOS, 6-Bit High-Speed Analog-to-digital Converter

CMOS, 6-Bit High-Speed Analog-to-Digital Converter

CMOS, 6-Bit High-Speed Analog-to-digital Converter

CMOS, 6-Bit High-Speed Analog-to-Digital Converter

CMOS, 6-Bit High-Speed Analog-to-digital Converter

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CMOS, 6-Bit High-Speed Analog-to-Digital Converter