N 沟道，UltraFET Trench® MOSFET，80V，22A，16.5mΩ

UItraFET器件结合了各种特性，可在功率转换应用中提供基准效率。 由于针对rDS(on)、低ESR、低总电荷和米勒栅极电荷进行了优化，这些器件是高频DC-DC转换器的理想选择。 •最大rDS(on) = 16.5mΩ （VGS = 10V, ID = 8.8A）\n•最大rDS(on) = 24mΩ（VGS = 6V, ID = 8.4A）\n•VGS = 10V时，Qg = 28nC（典型值）\n•低米勒电荷\n•优化高频率时的效率\n•符合RoHS标准;

N-Channel UltraFET Trench MOSFET 80V, 22A, 16.5mOHM

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N-Channel UltraFET Trench짰 MOSFET 80V, 22A, 16.5m?

文件：521.24 Kbytes Page：7 Pages

N-Channel Enhancement Mode MOSFET

Features + Advanced trench cell design + Low Thermal Resistance + Low Gate Charge

N-Channel UltraFET Trench짰 MOSFET 80V, 22A, 16.5m?

文件：521.24 Kbytes Page：7 Pages

Driver/Timing Generator for Color LCD Panels

Description The CXA3572R is an IC designed to drive the color LCD panel ACX306/312. This IC greatly reduces the number of peripheral circuits and parts by incorporating a RGB driver and timing generator for video signals and a VCO onto a single chip. This chip has a built-in serial interface cir

Driver/Timing Generator for Color LCD Panels

Description The CXA3572R is an IC designed to drive the color LCD panel ACX306/312. This IC greatly reduces the number of peripheral circuits and parts by incorporating a RGB driver and timing generator for video signals and a VCO onto a single chip. This chip has a built-in serial interface cir

N-Channel PowerTrench MOSFET

Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A • Qg(tot) = 31nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Primary switch for Isolated DC/DC converters •

Negative Output Flyback Pulse Width Modulator

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