N 沟道，Power Trench® MOSFET，80V，20A，23mΩ

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓越开关性能而定制的。 •￭ VGS = 23 V，ID = 7 A时，最大rDS(on) = 10 mΩ\n•VGS = 6 V，ID = 4 A时，最大rDS(on) = 37mΩ\n•薄型 - 最大1 mm，采用Power 33封装\n•100%经过UIL测试\n•符合RoHS标准;

N-Channel Power Trench MOSFET 80 V, 20 A, 23 milliohm

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CMOS 8-bit Single Chip Microcomputer

Description The CXP86212/86216, CXP86324/86332, CXP86440/86448/86460 are the CMOS 8-bit single chip microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time-base timer, on-screen display function, I2C bus interface, PWM output, remote control reception