N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，16A，56mΩ

N 沟道 MOSFET 采用飞兆半导体的先进 PowerTrench®工艺制造而成，该工艺集成了栅极屏蔽技术。该过程已经过优化，可提供优异的 rDS(on)、开关性能和耐用性。 •栅极屏蔽 MOSFET 技术\n•VGS = 10 V，ID = 4 A时，rDS(on) = 56 mΩ（最大值）\n•VGS = 6 V，ID = 3 A时，rDS(on)= 100 mΩ（最大值）\n•高性能沟道技术可实现极低的rDS(on)\n•高功率和高电流处理能力，采用广泛使用的表面贴装封装\n•100% 经过 UIL 测试\n•终端无引线且符合RoHS标准;

N-Channel Power Trench짰 MOSFET 100 V, 16 A, 56 m

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PoE-PD Interface Controller, IEEE 802.3bt

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Dual Video Amplifier

DESCRIPTION AA8622AP is a dual video amplifier with 6db gain, 75Ω output buffer and SAG correction. The 75Ω buffer is capable of driving two circuits. The SAG could reduce the output coupling capacitor. The power saving circuit provides the power saving function. The IC is available in 8-pin TSSO

Low-Power Single and Dual-Channel Digital Isolators

KEY FEATURES • High-speed operation • DC to 150 Mbps • No start-up initialization required • Wide Operating Supply Voltage • 2.5–5.5 V • Up to 5000 VRMS isolation • Reinforced VDE 0884-10, 10 kV surgecapable (Si862xxT) • 60-year life at rated working voltage • High electromagnetic immuni

Low-Power Single and Dual-Channel Digital Isolators

KEY FEATURES • High-speed operation • DC to 150 Mbps • No start-up initialization required • Wide Operating Supply Voltage • 2.5–5.5 V • Up to 5000 VRMS isolation • Reinforced VDE 0884-10, 10 kV surgecapable (Si862xxT) • 60-year life at rated working voltage • High electromagnetic immuni

2 - 20 GHz Gain Block Amplifier

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2 - 20 GHz Gain Block Amplifier

文件：579.48 Kbytes Page：7 Pages