N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，43A，14mΩ

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance. This device is well suited for applications where ultra low RDS(on) is required in small spaces suc • 扩展额定 TJ 至 175°C\n• 屏蔽栅极 MOSFET 技术\n• 最大值 rDS(on) = 14 mΩ（VGS = 10 V, ID = 9 A时）\n• 最大值 rDS(on) = 23 mΩ（VGS = 6 V, ID = 7 A时）\n• 高性能技术可实现极低的 rDS(on)\n• 终端无引线且符合 RoHS 标准\";