N 沟道，Power Trench® MOSFET，30V，14.8A，7.2mΩ

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻而定制的。 该器件非常适用于笔记本电脑和便携式电池组中的电源管理和负载开关应用。 •VGS = 10 V，ID = 14.8 A时，最大rDS(on) = 7.2 mΩ\n•VGS = 4.5 V，ID = 12.4 A时，最大rDS(on) = 9.5 mΩ\n•通态电阻rDS(on)极低的高性能技术\n•终端是符合RoHS标准的无铅产品;

N-Channel Power Trench짰 MOSFET 30 V, 14.8 A, 7.2 m

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