-20V P沟道PowerTrench® MOSFET

此P沟道MOSFET采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺已针对rDS(on)、开关性能和稳固性进行了优化。 •最大值 RDS(on) = 8.0 mΩ（VGS = -4.5 V, ID = -12 A）\n•最大值 RDS(on) = 9.8 mΩ（VGS = -2.5 V, ID = -10 A）\n•最大值 RDS(on) = 13 mΩ（VGS = -1.8 V, ID = -9.3 A）\n•最大值 RDS(on) = 17 mΩ（VGS = -1.5 V, ID = -8.3 A）\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力，采用广泛使用的表面贴装封装\n•100%经过UIL测试\n•终端无引线且符合RoHS标准\n•HBM ESD能力等级> 2KV典;

P-Channel PowerTrench MOSFET

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

POWER RECTIFIERS(5.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers ULTRA FAST POWER RECTIFIERS 5.0 AMPERES 500 -- 1000 VOLTS

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE- 20 to 100 Volts CURRENT- 5.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power loss,high efficiency • High surge capacity • For

POWER RECTIFIERS(5.0A,500-1000V)

ULTRA FAST RECTIFIERS 5.0 AMPERES 500-1000 VOLTS

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Surface Mount Schkttky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 5.0 AMPERES 70 - 100 VOLTS