N 沟道 UltraFET Trench® MOSFET 200V，9.5A，200mΩ

此 N 沟道 MOSFET 是采用飞兆半导体公司先进的 Power Trench 工艺生产的耐用型栅极版本。 已针对电源管理应用进行了优化。 •最大 rDS(on) = 200 mΩ（VGS = 10 V、ID = 2.2 A）\n•VGS = 6V，ID = 1.5A时，最大rDS(on) = 215 mΩ\n•薄型 - 1mm最大值，采用MicroFET 3.3 x 3.3 mm封装\n•符合 RoHS 要求;

N-Channel UltraFET Trench MOSFET(200V, 9.5A, 200mohm)

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N-Channel UltraFET Trench짰 MOSFET 200V, 9.5A, 200m廓

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N-Channel UltraFET Trench짰 MOSFET 200V, 9.5A, 200m廓

文件：384.79 Kbytes Page：7 Pages

N-Channel UltraFET Trench짰 MOSFET 200V, 9.5A, 200m廓

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LOW DROPOUT VOLTAGE REGULATORS

DESCRIPTION The L2600 series og three terminal positive regulators is specially designed to stabilize power supplies car instrumentation in vehicles with 12V battery. Available with output voltages equal to 5V, 8.5 V, 10V, they can supply an output current to 500mA. These devices are protect

LOW DROPOUT VOLTAGE REGULATORS

DESCRIPTION The L2600 series og three terminal positive regulators is specially designed to stabilize power supplies car instrumentation in vehicles with 12V battery. Available with output voltages equal to 5V, 8.5 V, 10V, they can supply an output current to 500mA. These devices are protect

LOW DROPOUT VOLTAGE REGULATORS

DESCRIPTION The L2600 series og three terminal positive regulators is specially designed to stabilize power supplies car instrumentation in vehicles with 12V battery. Available with output voltages equal to 5V, 8.5 V, 10V, they can supply an output current to 500mA. These devices are protect

Octal 12-bit, Serial Input, Voltage Output DAC with Power Down

DESCRIPTION The WM2610 is an octal, 12-bit, resistor string digital-toanalogue converter. The eight individual DACs contained in the IC can be switched in pairs between fast and slow (low power) operation modes, or powered down, under software control. Alternatively, the whole device can be power

Dual Schottky Diode Bridge

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