单 P 沟道，PowerTrench® MOSFET，-12V，-12A，12.5mΩ

该器件专为手机和其他超便携应用中的电池充电或负载开关而设计。 包含一个具有低通态电阻的MOSFET和齐纳二极管防静电放电保护。 MicroFET 2x2封装虽然体积小巧，却能提供出色的热性能，非常适合线性模式应用。 • 最大值 rDS(on) = 12.5 mΩ（需 VGS = -4.5 V 且 ID = -12 A）\n• 最大值 rDS(on) = 18 mΩ（需 VGS = -2.5 V 且ID = -10 A）\n• 最大值 rDS(on) = 28 mΩ（需 VGS = -1.8 V 且ID = -8 A）\n• 薄型 – 最大 0.8mm，采用新型 MicroFET 2x2 mm 封装\n• HBM 静电放电保护等级 > 2.8 kV 典型值 （注 3）\n• 无卤素化合物和锑氧化物\n• 符合 RoHS 标准;

POWER TRANSISTORS(15A,90W)

Dual-gate MOS-FETs

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward transfer admittance • Short ch

Dual-gate MOS-FETs

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward transfer admittance • Short ch

N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward transfer admittance • Short channe

8-Bit, 165MSPS DIGITAL-TO-ANALOG CONVERTER

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