Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20 V, 9.5 A, 23 mΩ

Features Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A HBM ESD protection level > 2.5 kV (Note 3) Low Profile-0.8 mm maximum in the new package

N 沟道，PowerTrench® MOSFET，1.5 V 指定，20V，9.5A，23mΩ

Single N-Channel 1.5 V Specified PowerTrench짰 MOSFET 20 V, 9.5 A, 23 m廓

文件：315.37 Kbytes Page：7 Pages

MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m

Description This Single N−Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe. This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package

MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m

Description This Single N−Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe. This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package

超薄 N 沟道，1.5 V，PowerTrench® MOSFET，20V，9.5A，23mΩ

Integrated Soldier Power and Data Management System (ISPDS) with USB.3.0 and 1G LAN Capabilities

FEATURES DESCRIPTION The advancement of technologies in the modern warfare has allowed the design of increasingly versatile tools in order to perform effectively and coherently in the battlefield. The modern infantry soldier, fully equipped with advanced weapon and communication systems, has

Heavy-Duty Hydra-Lift Karriers

文件：1.04551 Mbytes Page：3 Pages

Celeron M Processor on 65 nm Process

文件：1.93023 Mbytes Page：71 Pages

Detectable Buried Barricade Tapes 400 Series

文件：53.73 Kbytes Page：2 Pages

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

文件：597.06 Kbytes Page：3 Pages