P 沟道，PowerTrench® MOSFET， 1.8V 指定，-20V，-6.6A，42mΩ

该器件专为手机和其他超便携应用中的电池充电或负载开关而设计。 它具有带低通态电阻的MOSFET。 MicroFET 2x2封装虽然体积小巧，却能提供出色的热性能，非常适合线性模式应用。 • -6.6 A，-20 V\n•RDS(ON) = 42 mΩ @ VGS = -4.5 V\n•RDS(ON) = 58 mΩ（VGS = -2.5V）\n•RDS(ON) = 98 mΩ（VGS = -1.8V）\n•薄型 – 最大0.8mm – 采用新的MicroFET 2x2 mm封装\n•无任何卤代化合物和锑氧化物\n•符合RoHS标准;

Single P-Channel 1.8V Specified PowerTrench MOSFET

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Single P-Channel 1.8V Specified PowerTrench짰 MOSFET

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Single P-Channel 1.8V Specified PowerTrench짰 MOSFET

文件：902.04 Kbytes Page：6 Pages

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

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