Dual N-Channel PowerTrench짰 MOSFET 20 V, 5.0 A, 54 m廓

General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Features ■ Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A ■ Max rDS(on) = 29 mΩ at VGS = 2.5 V,

Dual N-Channel PowerTrench짰 MOSFET

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双 N 沟道，PowerTrench® MOSFET，20V，5.0A，54mΩ

In-System Programmable High Density PLD

Description The ispLSI 1024/883 is a High-Density Programmable Logic Device processed in full compliance to MIL-STD-883. This military grade device contains 144 Registers, 48 Universal I/O pins, six Dedicated Input pins, four Dedicated Clock Input pins and a Global Routing Pool (GRP). Featu

Pulse Transformers

RoHS compliant UL 94V-0 package material Isolation to 4kVrms Compact footprint PCB mounting Backward compatible with Sn/Pb soldering systems

In-System Programmable High Density PLD

Description The ispLSI 1024EA is a High Density Programmable Logic Device containing 144 Registers, 48 Universal I/O pins, two Dedicated Input pins, four Dedicated Clock Input pins and a Global Routing Pool (GRP). Features • HIGH DENSITY PROGRAMMABLE LOGIC — 4000 PLD Gates — 48 I/O

Pulse Transformers

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SM BATTERY HOLDER AA, ON TAPE

文件：96.76 Kbytes Page：1 Pages