Dual N-Channel PowerTrench짰 MOSFET 20 V, 5.0 A, 54 m廓

General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Features ■ Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A ■ Max rDS(on) = 29 mΩ at VGS = 2.5 V,

丝印代码：024；Dual N-Channel PowerTrench짰 MOSFET

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双 N 沟道，PowerTrench® MOSFET，20V，5.0A，54mΩ

Integrated Circuit Module - Hybrid, Audio Power Amplifier

Integrated Circuit Module – Hybrid, Audio Power Amplifier

P-SERIES LINEAR PHOTODIODE ARRAY IMAGERS

Description In the P-series linear imagers, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed charge coupled scanning to offer an uncompromising solution to the increasing demands of advanced imaging applications. Features • Extende

PRECISION TEMPERATURE-TO-VOLTAGE CONVERTERS WITH SHUTDOWN MODE

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Data amplifier and laser supply circuit for CD audio and video optical systems ADALAS

文件：134.4 Kbytes Page：20 Pages

Data amplifier and laser supply circuit for CD audio and video optical systems ADALAS

文件：134.4 Kbytes Page：20 Pages