Dual N-Channel PowerTrench짰 MOSFET 20 V, 5.0 A, 54 m廓

General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Features ■ Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A ■ Max rDS(on) = 29 mΩ at VGS = 2.5 V,

双 N 沟道，PowerTrench® MOSFET，20V，5.0A，54mΩ

该器件是专为满足蜂窝手机和其他超便携应用中的双开关要求而设计的单封装解决方案。 该器件具有两个带低通态电阻的独立N沟道MOSFET，可最大限度地降低传导损耗。 MicroFET 2x2封装虽然体积小巧，却能提供出色的热性能，非常适合线性模式应用。 •VGS = 4.5 V，ID = 5.0 A时，最大rDS(on) = 54 mΩ\n•最大rDS(on) = 66 mΩ（VGS = 2.5 V，ID = 4.2 A）\n•VGS = 1.8 V，ID = 2.3 A时，最大rDS(on) = 82 mΩ\n•VGS = 1.5 V，ID = 2.0 A时，最大rDS(on) = 114 mΩ\n•HBM ESD保护等级 = 1.6 kV（注3）\n•薄型 - 最厚0.8mm - 采用新的MicroFET 2x2 mm封装\n•符合RoHS标准\n•无任何卤代化合物和锑氧化物;

丝印代码：024；Dual N-Channel PowerTrench짰 MOSFET

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Integrated Circuit Module - Hybrid, Audio Power Amplifier

Integrated Circuit Module – Hybrid, Audio Power Amplifier

P-SERIES LINEAR PHOTODIODE ARRAY IMAGERS

Description In the P-series linear imagers, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed charge coupled scanning to offer an uncompromising solution to the increasing demands of advanced imaging applications. Features • Extende

PRECISION TEMPERATURE-TO-VOLTAGE CONVERTERS WITH SHUTDOWN MODE

文件：134.82 Kbytes Page：6 Pages

Data amplifier and laser supply circuit for CD audio and video optical systems ADALAS

文件：134.4 Kbytes Page：20 Pages

Data amplifier and laser supply circuit for CD audio and video optical systems ADALAS

文件：134.4 Kbytes Page：20 Pages