General Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.

Features

■ Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A

■ Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A

■ Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A

■ Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A

■ HBM ESD protection level > 2.5 kV (Note 3)

■ Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm

■ RoHS Compliant

Applications

■ Li-lon Battery Pack