Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductors advanced PowerTrench® process to optimize the rDS(on) @ VGS = 2.5V on special MLP lead frame with all the drains on one side of the package. Features ■ Max rDS(on) = 23mΩ at VGS = 4.5V, ID = 10A ■ M

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench짰 MOSFET 20V, 10A, 23m廓

文件：237.49 Kbytes Page：6 Pages

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench짰 MOSFET 20V, 10A, 23m廓

文件：237.49 Kbytes Page：6 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

SINGLE TMOS POWER MOSFET 30 VOLTS

WaveFET™ Power Surface Mount Products HDTMOS Single N-Channel Field Effect Transistor WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withst

Silicon planar type

文件：49.05 Kbytes Page：4 Pages

Silicon planar type

文件：49.05 Kbytes Page：4 Pages