N-Channel PowerTrench MOSFET 150V, 79A, 16m?

Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • Qg(tot) = 86nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82884 Applications • DC/DC conve

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 79A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mo

MOSFET N-CH 150V 79A TO-262AB

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors up to 82 kHz.

4096 x 8-BIT UV ERASABLE PROM

4096 x 8-BIT UV ERASABLE PROM (N-CHANNEL, SILICON-GATE)

4096 x 8-BIT UV ERASABLE PROM

4096 x 8-BIT UV ERASABLE PROM (N-CHANNEL, SILICON-GATE)

32k-Bit (4k x 8) UV Erasable PROM

文件：222.54 Kbytes Page：5 Pages

32k-Bit (4k x 8) UV Erasable PROM

文件：222.54 Kbytes Page：5 Pages