N-Channel PowerTrench MOSFET 60V, 80A, 3.8m?

Features • rDS(ON) = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.8mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mo

N 沟道 PowerTrench® MOSFET 60V，80A，3.8mΩ

N-Channel PowerTrench짰 MOSFET 60V, 80A, 3.8m?

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N-Channel PowerTrench짰 MOSFET 60V, 80A, 3.8m廓

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Aluminum Electrolytic Capacitors Radial Standard Ultra Miniature

FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case, insulated with a blue sleeve • Pressure relief for case Ø D ≥ 6.3 mm • Charge and discharge proof • Miniaturized, high CV-product per unit volume • Material categorizatio

Aluminum Capacitors Radial Standard Ultra Miniature

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Aluminum Electrolytic Capacitors

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Aluminum Capacitors Radial Standard Ultra Miniature

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Super-mini package regulator IC

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