P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.6 A, –20 V. RDS(ON)= 0.40 Ω@ VGS= –4.5 V RDS(ON)= 0.55 Ω@ VGS= –2.5

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.6 A, –20 V. RDS(ON)= 0.40 Ω@ VGS= –4.5 V RDS(ON)= 0.55 Ω@ VGS= –2.5

双 P 沟道，1.8V，指定 PowerTrench® MOSFET，-20 V，-0.6 A，400 mΩ

此P沟道1.8V额定MOSFET是采用飞兆半导体先进的PowerTrench工艺生产的稳固栅极版本。 它已针对电池的电源管理应用进行了优化。 •-0.6 A、-20 V。\n•RDS(ON)= 0.40Ω @ VGS = –4.5 V \n•RDS(ON) = 0.55Ω @ VGS = –2.5 V\n•RDS(ON) = 0.80Ω @ VGS = –1.8 V\n•低栅极电荷 \n•高性能沟道技术可实现极低的RDS(ON)\n•紧凑的工业标准SC70-6表面贴装封装;

Analog Switch ICs for VCR

Overview The AN6308 and the AN6308S are integrated circuits designed for video band analog switching. Features • Good frequency response : 10MHz flat • High speed switching : 70ns typ. • Low power consumption : 13mW typ. • Supply voltage : 5V

Analog Switch ICs for VCR

Overview The AN6308 and the AN6308S are integrated circuits designed for video band analog switching. Features • Good frequency response : 10MHz flat • High speed switching : 70ns typ. • Low power consumption : 13mW typ. • Supply voltage : 5V

AUTO REVERSE & AUTO EJECT PLUNGER DRIVER

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