Axial Vitreous Leaded Wirewound Resistors with CECC Approval

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N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable e

P-Channel 2.5V Specified PowerTrench??MOSFET

General Description This P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable e

Digital FET, N-Channel

General Description This N-Channel enhancement mode field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage

Digital FET, P-Channel

General Description This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed

P-Channel Logic Level PowerTrench MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batte

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ VGS =

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ VGS =

20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate c

20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate c

P-Channel 2.5V Specified PowerTrench MOSFET

Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V). Features •–1.5 A, –20 V. Rds(on)= 0.1

20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate c

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –2 A, –12 V. RDS(ON) = 110 mΩ @ VGS = –4.5 V RDS(ON) = 150 mΩ @ VGS = –2.5 V RDS(ON) = 215 mΩ @ VGS = –

Dual N-Channel MOSFET

■ Features ● VDS (V) = 25V ● ID = 220m A (VGS = 4.5V) ● RDS(ON) 6kV Human Body Model).

Dual N-Channel, Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

Dual N-Channel, Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

Dual N-Channel, Digital FET

Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7 V. • Very Low Level Gate Drive Requirements allowing Directop− Eration in 3 V Circuits (VGS(th) 6 kV Human Body Model) • Compact Indu

Dual P-Channel, Digital FET

General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

Dual P-Channel, Digital FET

General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

Dual N-Channel, Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

Dual N-Channel, Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

Dual P-Channel, Digital FET

General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

Dual P-Channel, Digital FET

General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features –0.6 A, –20 V. Rds(on)= 420 mΩ@ VGS= –4.5 V

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.6 A, –20 V. RDS(ON)= 0.40 Ω@ VGS= –4.5 V RDS(ON)= 0.55 Ω@ VGS= –2.5

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.6 A, –20 V. RDS(ON)= 0.40 Ω@ VGS= –4.5 V RDS(ON)= 0.55 Ω@ VGS= –2.5

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS =

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS =

Dual 20v N-Channel PowerTrench MOSFET

General Description This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and g

Dual P-Channel, Digital FET

General Description These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a repl

Dual N & P Channel Digital FET

General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe

20V N-Channel P-Channel Enhancement Mode MOSFET |

Application © Notebook © Load Switch © Networking © Hand-held Instruments

Dual N & P Channel Digital FET

General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe

Dual N & P Channel Digital FET

General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe

Dual N & P Channel Digital FET

General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.6A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.6A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q

Integrated Load Switch

General Description This device is intended to be configured as a load switch and is particularly suited for compact computer peripheral switching applications where 3V to 20V input and 0.6A output current capability are needed. This device features a small N-Channel MOSFET (Q1) together with a l

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2

20V N & P-Channel PowerTrench MOSFETs

General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional pow

20V N & P-Channel PowerTrench짰MOSFETs

General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional pow

20V N & P-Channel PowerTrench MOSFETs

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate c

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

• CECC 40201-801 approval options: - Version A, failure rate level E0 - Version E, with established reliability, failure rate level E7 • High power dissipation in a small design • Excellent pulse load capability • Vitreous coating • Non-flammable and enhanced humidity protection