丝印代码：FDD8796；25V N -Channel MOSFET

Features Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V Low gate resistance VDS(V) =25V ID =35A (VGS = 10V) RDS(ON)

N 沟道，PowerTrench® MOSFET，25V，35A，5.7mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON)和高速开关进行了优化。 •VGS = 10V，ID = 35A时，最大rDS(on) = 5.7 mΩ\n•VGS = 4.5V，ID = 35A时，最大rDS(on) = 8.0 mΩ\n•低栅极电荷： Qg(10) = 37nC（典型值），VGS = 10V\n•低栅极电阻\n•雪崩额定值，100%经过测试\n•符合RoHS标准;

N-Channel PowerTrench짰 MOSFET 25V, 35A, 5.7mOhm

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features „

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=35A@ TC=25℃ ·Drain Source Voltage : VDSS=25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

Six Channel Integrated Power Management IC for Handheld Portable Equipment

GENERAL DESCRIPTION The patent-pending ACT8796 is a complete, cost-effective, highly-efficient ActivePMUTM power management solution that is ideal for a wide range of portable handheld equipment. This device integrates three step-down DC/DC converters and three low dropout linear regulators (LDOs

N-Channel PowerTrench MOSFET 25V, 35A, 5.7mOhm

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features „

N-Channel PowerTrench짰 MOSFET 25V, 35A, 5.7mOhm

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features „

Six Channel Integrated Power Management IC for Handheld Portable Equipment

文件：657.15 Kbytes Page：34 Pages

PLASTIC ENCAPSULATED DEVICES

文件：32.08 Kbytes Page：5 Pages