General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Features

„ Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 35A

„ Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 35A

„ Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V

„ Low gate resistance

„ Avalanche rated and 100 tested

„ RoHS Compliant

Application

„ Vcore DC-DC for Desktop Computers and Servers

„ VRM for Intermediate Bus Architecture