isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=35A@ TC=25℃ ·Drain Source Voltage : VDSS=25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N-Channel PowerTrench MOSFET 25V, 35A, 4.0mOHM

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N-Channel PowerTrench짰 MOSFET

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Electronic, 3C #18 Str TC, PO ins, OS, LSNH Jkt 300V, Cca

Product Description Electronic, 3 Conductor AWG 18 Tinned Copper - Stranded, Polyolefin (PO, PE, PP) insulation, Foil(s) or Copper Tape(s) shielding, LSZH / FRNC jacket 300V, Cca

SpaceMaker™, 3 C #18 Str TC, PO Ins, OS, PVC Jkt, AWM 2937

Product Description SpaceMaker™, 3 Conductor 18AWG (41x34) Tinned Copper, PO Insulation, Overall Beldfoil® Shield, PVC Outer Jacket, AWM 2937

Electronic, 3C #18 Str TC, PO ins, OS, LSNH Jkt 300V

Product Description Electronic, 3 Conductor AWG 18 Tinned Copper - Stranded, Polyolefin (PO, PE, PP) insulation, Foil(s) or Copper Tape(s) shielding, LSZH / FRNC jacket 300V

Electronic, 3 C #18 Str TC, PO Ins, OS, LSZH Jkt, CMG

Product Description Electronic, 3 Conductor 18AWG (16x30) Tinned Copper, PO Insulation, Overall Beldfoil® Shield, LSZH Outer Jacket, CMG

Electronic, 3 C #18 Str TC, PE Ins, OS, PVC Jkt, CM

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