Fast Switching

General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. Features ■ Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A

40V N-Channel MOSFET

Features * Vds=60V,ID=53A * Rosion= 12ma@Ves=10v * Rosion = 17m0@Ves=4.5V

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-channel Enhancement Mode Power MOSFET

Features  VDS= 40V, ID= 80A RDS(ON)

40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.5mΩ

Features Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A Max rDS(on) = 11.0mΩ at VGS = 4.5V, ID = 11A Fast Switching RoHS Compliant General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and opti

N-Channel PowerTrench짰 MOSFET 40V, 50A, 11.0m廓

Features ■ Typ rDS(on) = 7.0mΩ at VGS = 10V, ID = 14A ■ Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A ■ Fast Switching ■ Qualified to AEC Q101 ■ RoHS Compliant Applications ■ Inverter ■ Power Supplies ■ Automotive Engine Control ■ Power Train Management ■ Solenoid and Motor Drivers ■ Ele

40V N-Channel PowerTrench짰 MOSFET 40V, 50A, 8.5m廓

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N 沟道，PowerTrench® MOSFET，40V，50A，11.0mΩ

N-Channel PowerTrench짰 MOSFET

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