N-Channel MOSFET 500V, 5.5A, 1.15廓

Description These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=5.5A@ TC=25℃ ·Drain Source Voltage : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.15Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，5.5 A，1.15 Ω，DPAK

N-Channel MOSFET 500V, 5.5A, 1.15廓

Description These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

N-Channel MOSFET 500V, 5.5A, 1.15廓

Description These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

Fast Switching Speed

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6 Amps, 500 Volts N-CHANNEL POWER MOSFET

文件：172.01 Kbytes Page：6 Pages

6A, 500V N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

文件：309.05 Kbytes Page：2 Pages

500V,5.3A N-Channel MOSFET

文件：495.16 Kbytes Page：6 Pages