isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel PowerTrench® MOSFET 25 V, 3.2 mΩ

N-Channel PowerTrench짰 MOSFET 25 V, 3.2 m廓

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WISE-EdgeLink

Features of EdgeLink • Configure a gateway with Windows utility • Support the collection and forwarding of multiple southb ound and northbound communication protocols, such as MQTT, AMQP, LwM2M, OPC UA, Modbus, IEC 104, DNP 3.0, etc. • ‘One click’ downloads for data communication and network c

1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS

• 1N5819 AND 1N6761 AVAILABLE IN JANHC AND JANKC PER MIL PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW

1 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N5819UR-1 AND 1N6761UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED

Intelligent I/O Gateway with Analog Input

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30V N-Channel AlphaMOS

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