位置：首页 > IC中文资料第1860页 > FDD6676
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FDD6676 | 30VN-ChannelPowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed.extremelylowRDS(ON | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
FDD6676 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=78A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=78A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
30VN-ChannelPowerTrenchMOSFET GeneralDescription TheFDS6676SisdesignedtoreplaceaDPAKMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676SincludesanintegratedSchottkydiodeusing | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
WidebandIFReceiverSubsystem 文件：1.9312 Mbytes Page：90 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
WidebandIFReceiverSubsystem 文件：2.23305 Mbytes Page：90 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
WidebandIFReceiverSubsystem 文件：2.23305 Mbytes Page：90 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
WidebandIFReceiverSubsystem 文件：1.9312 Mbytes Page：90 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
WidebandIFReceiverSubsystem 文件：2.23305 Mbytes Page：90 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | |
FDD6676产品属性
- 类型
描述
- 型号
FDD6676
- 功能描述
MOSFET 30V N-Ch PowerTrench
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO252 |
154495 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD |
SOT252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
FAIRCHILD |
23+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
FAIRCHILD |
23+ |
TO252 |
9526 |
||||
FAIRCHIL |
21+ |
TO252 |
20000 |
原厂订货价格优势,可开13%的增值税票 |
|||
FAI |
2018+ |
TO252 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
|||
FAIRCHILD/仙童 |
2310+ |
SOT252 |
3689 |
优势代理渠道,原装现货,可全系列订货 |
|||
仙童 |
TO-252 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FAIRCHILD |
2002 |
TO252 |
2280 |
原装现货海量库存欢迎咨询 |
|||
FAIRCHILD/仙童 |
2024+实力库存 |
TO-252 |
12000 |
只做原厂渠道 可追溯货源 |
FDD6676芯片相关品牌
FDD6676规格书下载地址
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2019-9-24
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