型号 功能描述 生产厂家 企业 LOGO 操作
FDD6676

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON

Fairchild

仙童半导体

FDD6676

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=78A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

ISC

无锡固电

FDD6676

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

Bychip

百域芯

FDD6676

30V N-Channel PowerTrench MOSFET

ONSEMI

安森美半导体

30V N-Channel PowerTrench SyncFET

General Description The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6676AS includes a patented combination of a MOS

Fairchild

仙童半导体

30V N-Channel PowerTrench SyncFET

General Description The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6676AS includes a patented combination of a MOS

Fairchild

仙童半导体

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

Bychip

百域芯

30V N-Channel PowerTrench SyncFET

General Description The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6676AS includes a patented combination of a MOS

Fairchild

仙童半导体

30V N-Channel PowerTrench MOSFET

General Description The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6676S includes an integrated Schottky diode using

Fairchild

仙童半导体

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

Bychip

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=78A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

30V N-Channel PowerTrench SyncFET

ONSEMI

安森美半导体

Wideband IF Receiver Subsystem

文件:1.9312 Mbytes Page:90 Pages

AD

亚德诺

Wideband IF Receiver Subsystem

文件:2.23305 Mbytes Page:90 Pages

AD

亚德诺

Wideband IF Receiver Subsystem

文件:2.23305 Mbytes Page:90 Pages

AD

亚德诺

Wideband IF Receiver Subsystem

文件:1.9312 Mbytes Page:90 Pages

AD

亚德诺

Wideband IF Receiver Subsystem

文件:2.23305 Mbytes Page:90 Pages

AD

亚德诺

FDD6676产品属性

  • 类型

    描述

  • 型号

    FDD6676

  • 功能描述

    MOSFET 30V N-Ch PowerTrench

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-27 16:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
25+
TO-252
4500
全新原装、诚信经营、公司现货销售
FSC
25+23+
TO-252
37445
绝对原装正品全新进口深圳现货
FAIRCILD
22+
TO-252
8000
原装正品支持实单
FAIRCHILD/仙童
23+
TO252-3
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
SOT-252
1371
FAIRCHIL
24+
TO-252
90000
一级代理商进口原装现货、价格合理
FAIRCHILD/仙童
2450+
SOT252
9850
只做原厂原装正品现货或订货假一赔十!
FAIRCHIL
25+
TO-252
2650
原装优势!绝对公司现货
onsemi(安森美)
24+
TO-252
7793
支持大陆交货,美金交易。原装现货库存。
FAIRCHILD/仙童
TO252
23+
6000
原装现货有上库存就有货全网最低假一赔万

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