30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6670SisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6670SincludesanintegratedSchottkydiodeu

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=64A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=59mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

N-channelAdvancedModePowerMOSFET

Features VDS=40V,ID=150A RDS(ON)

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomp

10Base-TSMDAnalogInterfaceModule

文件：381.56 Kbytes Page：1 Pages

Single-TurnPrecisionPotentiometer

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LAN10Base-TSMDAnalogInterfaceModule

文件：76.6 Kbytes Page：1 Pages

ATA6670-EKDevelopmentBoardV1.0

文件：392.14 Kbytes Page：9 Pages