N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) , fast switching speed and extremely low RDS(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=66A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

丝印代码：FDD6670；30V N-Channel MOSFET

Features · RDS(ON )= 8 mW（ VGS = 10 V） · RDS(ON) = 10 mW（ VGS = 4.5 V） · Low gate charge · Fast Switching · High performance trench technology for extremely low RDS(ON) · VDS (V) = -30V

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

N 沟道，逻辑电平，PowerTrench® MOSFET，30V，66A，8mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极点和、低RDS(ON)、快速开关和超低RDS(ON)进行了优化，采用小型封装。 •66 A，30 V。\n•RDS(on) = 8 mΩ @ VGS = 10 V\n•RDS(on) = 10 mΩ @ VGS = 4.5 V\n•低栅极电荷\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON);

30V N-Channel PowerTrench MOSFET

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N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=84A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features •

30V N-Channel PowerTrench SyncFET

General Description The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670AS includes a patented combination of a M

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

30V N-Channel PowerTrench SyncFET

General Description The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670AS includes a patented combination of a M

30V N-Channel PowerTrench MOSFET

文件：110.7 Kbytes Page：6 Pages

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) , fast switching speed and extremely low RDS(

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comp

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comp

3.3V INPUT 20W BOOST INTEGRATED SWITCHING REGULATOR

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