FDD6030价格
参考价格:¥1.3000
型号:FDD6030L 品牌:Fairchild Semiconductor 备注:这里有FDD6030多少钱,2026年最近7天走势,今日出价,今日竞价,FDD6030批发/采购报价,FDD6030行情走势销售排行榜,FDD6030报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FDD6030 | N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O | FAIRCHILD 仙童半导体 | ||
FDD6030 | N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features · 12 A, 30 V RDS(ON)= 1 | FAIRCHILD 仙童半导体 | ||
FDD6030 | N-Channel PowerTrenchTM MOSFET | ONSEMI 安森美半导体 | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mod | ISC 无锡固电 | |||
30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O | FAIRCHILD 仙童半导体 | |||
N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O | FAIRCHILD 仙童半导体 | |||
N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features · 12 A, 30 V RDS(ON)= 1 | FAIRCHILD 仙童半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m | ISC 无锡固电 | |||
N 沟道,PowerTrench® MOSFET,30V,12A,14.5mΩ 此N沟道MOSFET采用飞兆半导体先进的PowerTrench工艺生产,该工艺专为最大限度地降低通态电阻并保持卓越的开关性能而量身定制。 •12 A, 30V\n•RDS(ON) = 14.5 mΩ @ VGS = 10V\n•RDS(ON) = 21.0 mΩ @ VGS = 4.5V\n•低栅极电荷 \n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON); | ONSEMI 安森美半导体 | |||
30V N -Channel PowerTrench® MOSFET | ONSEMI 安森美半导体 | |||
30V N-Channel PowerTrench MOSFET 文件:118.78 Kbytes Page:6 Pages | FAIRCHILD 仙童半导体 | |||
30V N-Channel PowerTrench MOSFET 文件:118.78 Kbytes Page:6 Pages | FAIRCHILD 仙童半导体 | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | |||
N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with | FAIRCHILD 仙童半导体 | |||
N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with | FAIRCHILD 仙童半导体 | |||
LOW DROP POWER SCHOTTKY RECTIFIER DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. FEATURES AND BENEFITS ■ VERY SMALL CO | STMICROELECTRONICS 意法半导体 | |||
SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 50 Volts CURRENT 60 Amperes) 文件:230.18 Kbytes Page:2 Pages | RECTRON 丽正 |
FDD6030产品属性
- 类型
描述
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
30
- VGS Max (V):
20
- VGS(th) Max (V):
3
- ID Max (A):
12
- PD Max (W):
56
- RDS(on) Max @ VGS = 4.5 V(mΩ):
21
- RDS(on) Max @ VGS = 10 V(mΩ):
14.5
- Qg Typ @ VGS = 4.5 V (nC):
6.5
- Qg Typ @ VGS = 10 V (nC):
13
- Ciss Typ (pF):
1230
- Package Type:
DPAK-3/TO-252-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHIL |
2025+ |
TO-252-2 |
5425 |
全新原厂原装产品、公司现货销售 |
|||
FSC |
22+ |
TO2652 |
8200 |
全新进口原装现货 |
|||
FAIRCILD |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD |
25+ |
TO-252 |
27500 |
原装正品,价格最低! |
|||
FAIRCHILD |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
FAIRCHILD |
2001 |
TO252 |
1278 |
原装现货海量库存欢迎咨询 |
|||
ON/安森美 |
SMD |
23+ |
6000 |
专业配单原装正品假一罚十 |
|||
FAIRCHILD/仙童 |
25+ |
TO-252 |
15000 |
全新原装现货,价格优势 |
|||
FAIR |
26+ |
SMD252 |
6980 |
原装现货,可开13%税票 |
|||
FAIRCHILD |
26+ |
TO252 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
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FDD6030规格书下载地址
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DdatasheetPDF页码索引
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