位置:首页 > IC中文资料 > FDD6030

FDD6030价格

参考价格:¥1.3000

型号:FDD6030L 品牌:Fairchild Semiconductor 备注:这里有FDD6030多少钱,2026年最近7天走势,今日出价,今日竞价,FDD6030批发/采购报价,FDD6030行情走势销售排行榜,FDD6030报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FDD6030

N-Channel PowerTrenchTM MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

FAIRCHILD

仙童半导体

FDD6030

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features · 12 A, 30 V RDS(ON)= 1

FAIRCHILD

仙童半导体

FDD6030

N-Channel PowerTrenchTM MOSFET

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mod

ISC

无锡固电

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

FAIRCHILD

仙童半导体

N-Channel PowerTrenchTM MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

FAIRCHILD

仙童半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features · 12 A, 30 V RDS(ON)= 1

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

ISC

无锡固电

N 沟道,PowerTrench® MOSFET,30V,12A,14.5mΩ

此N沟道MOSFET采用飞兆半导体先进的PowerTrench工艺生产,该工艺专为最大限度地降低通态电阻并保持卓越的开关性能而量身定制。 •12 A, 30V\n•RDS(ON) = 14.5 mΩ @ VGS = 10V\n•RDS(ON) = 21.0 mΩ @ VGS = 4.5V\n•低栅极电荷 \n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体

30V N -Channel PowerTrench® MOSFET

ONSEMI

安森美半导体

30V N-Channel PowerTrench MOSFET

文件:118.78 Kbytes Page:6 Pages

FAIRCHILD

仙童半导体

30V N-Channel PowerTrench MOSFET

文件:118.78 Kbytes Page:6 Pages

FAIRCHILD

仙童半导体

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

FAIRCHILD

仙童半导体

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

FAIRCHILD

仙童半导体

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. FEATURES AND BENEFITS ■ VERY SMALL CO

STMICROELECTRONICS

意法半导体

SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 50 Volts CURRENT 60 Amperes)

文件:230.18 Kbytes Page:2 Pages

RECTRON

丽正

FDD6030产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    30

  • VGS Max (V):

    20

  • VGS(th) Max (V):

    3

  • ID Max (A):

    12

  • PD Max (W):

    56

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    21

  • RDS(on) Max @ VGS = 10 V(mΩ):

    14.5

  • Qg Typ @ VGS = 4.5 V (nC):

    6.5

  • Qg Typ @ VGS = 10 V (nC):

    13

  • Ciss Typ (pF):

    1230

  • Package Type:

    DPAK-3/TO-252-3

更新时间:2026-8-4 14:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHIL
2025+
TO-252-2
5425
全新原厂原装产品、公司现货销售
FSC
22+
TO2652
8200
全新进口原装现货
FAIRCILD
22+
TO-252
8000
原装正品支持实单
FAIRCHILD
25+
TO-252
27500
原装正品,价格最低!
FAIRCHILD
25+
TO-252
4500
全新原装、诚信经营、公司现货销售
FAIRCHILD
2001
TO252
1278
原装现货海量库存欢迎咨询
ON/安森美
SMD
23+
6000
专业配单原装正品假一罚十
FAIRCHILD/仙童
25+
TO-252
15000
全新原装现货,价格优势
FAIR
26+
SMD252
6980
原装现货,可开13%税票
FAIRCHILD
26+
TO252
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订

FDD6030数据表相关新闻