N-Channel MOSFET 500V, 4A, 1.4廓

Description UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitabl

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

原装正品现货价格优惠可开发票

文件：515.596 Kbytes Page：8 Pages

功率 MOSFET，N 沟道，UniFETTM，500 V，4 A，1.4 Ω，DPAK

N-Channel MOSFET, FRFET 500V, 3.5A, 1.55廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

N-Channel MOSFET, FRFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.55Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel MOSFET, FRFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

N-Channel MOSFET 500V, 4A, 1.5?

Description UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avala

N-Channel MOSFET 500V, 3.7A, 1.75廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

N-Channel MOSFET 500V, 3.7A, 1.75廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N-Channel MOSFET 500V, 4A, 1.5?

Description UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avala

N-Channel MOSFET, FRFET 500V, 3A, 2.0廓

Description UniFETTM MOSFET is Fairchild Semiconductor®s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. Features • RDS(on) = 1

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.0Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

包装：卷带（TR） 描述：MOSFET N-CH 500V 3.5A DPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

功率 MOSFET，N 沟道，UniFETTM II，500 V，4 A，1.5 Ω，DPAK

功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，3.7 A，1.75 Ω，DPAK

N-CHANNEL POWER MOSFET

文件：2.93481 Mbytes Page：8 Pages

isc N-Channel MOSFET Transistor

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500V N-CHANNEL POWER MOSFET

文件：177.34 Kbytes Page：6 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.07716 Mbytes Page：9 Pages

5A, 500V N-CHANNEL POWER MOSFET

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