60V N-Channel PowerTrenchTM MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 48 A, 60 V. RDS(ON) = 0.015 Ω @ VGS = 10 V RDS(ON) = 0.018 Ω @ VGS = 6 V. • Low gate cha

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=52A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =15mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

N 沟道，PowerTrench® MOSFET，60V，52A，15mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低ＲDS(ON)和高速开关进行了优化。 小封装里极低的RDS(ON)。 •52 A、60 V。\n•RDS(on) = 15 Ω @ VGS = 10 V\n•RDS(on) = 18 Ω @ VGS = 6 V\n•低栅极电荷 \n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON);

N-Channel 60 V (D-S) MOSFET

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60V N-Channel PowerTrench짰 MOSFET

文件：144.98 Kbytes Page：5 Pages

60V N-Channel PowerTrench짰 MOSFET

文件：144.98 Kbytes Page：5 Pages

60V N-Channel PowerTrench??MOSFET

60V N-Channel PowerTrench® MOSFET

SAM5670

Features • Milky diffusion lens type • φ5mm(T-13/4) all plastic mold type • Radiation color (Amber, Y-Green) • Low power consumption

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