60V N-Channel PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 19 A, 60 V. RDS(ON) = 0.055 Ω @ VGS = 10 V RDS(ON) = 0.064 Ω @

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =55mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

60V N 沟道 PowerTrench® MOSFET 18A，55mΩ

2.7 V to 5.5 V, uA, 8-/10-/12-Bit nanoDACs with

GENERAL DESCRIPTION The AD5602/AD5612/AD5622, members of the nanoDAC® family, are single 8-, 10-, 12-bit buffered voltage-out digital-to-analog converters (DAC) that operate from a single 2.7 V to 5.5 V supply, consuming FEATURES Single 8-, 10-, 12-bit DACs, 2 LSB INL 6-lead LFCSP and S

2.7 V to 5.5 V, μA, 8-/10-/12-Bit nanoDACs with I2C Compatible Interface in LFCSP and SC70

FEATURES ► Single 8-, 10-, 12-bit DACs, 2 LSB INL ► 6-lead LFCSP and SC70 packages ► Micropower operation: 100 μA maximum at 5 V ► Power down to

Microwave Wideband Synthesizer with Integrated VCO

FEATURES ► RFOUT output frequency range: 7300MHz to 8500MHz ► PDIV_OUT and NDIV_OUT frequency range: 57MHz to 8500MHz ► Fractional-N synthesizer and Integer N synthesizer modes ► Typical PFD spurious:

Rectangular LED Assembly

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High Current Chokes

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