P-Channel, Logic Level, MOSFET

General Description This P-Channel Logic level MOSFET is produced using Fairchild Semiconductors advanced process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • -8 A, -60 V. RDS(on) = 0.3 Ω @

P-Channel, Logic Level, MOSFET

1.55 關m Edge-Emitting LED DIP Module

GENERAL DESCRIPTION The OE5202G is a 1.55 μm, edge-emitting LED DIP module with a single-mode fiber pigtail. The high coupling efficiency of the OKI EE-LED yields a single-mode fiber output of over 20 μW. The module is an optimal light source for optical LAN systems and measuring instruments.

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features