200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V • Low gate charge • Fast switching speed •

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.9A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =720mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200 V, ID= 8 A RDS(ON)

N 沟道，PowerTrench® MOSFET，200V，3.6A，130mΩ

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